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VEMT3700-GS08
VEMT3700-GS08
Phototransistors VEMT3700-GS08
Vishay
VEMT3700-GS08
--
Optoelectronics
Phototransistors
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingSurface Mount
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveNo
Lead ShapeJ-Lead
PCB changed2
Part StatusActive
Package Width2.8
Cut-Off FilterVisible Cut-off
Package Length3
Lens Shape TypeFlat
Supplier PackagePLCC
Viewing OrientationTop View
Peak Wavelength (nm)850
Phototransistor TypePhototransistor
Standard Package NameLCC
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)6000(Typ)
Maximum Rise Time (ns)6000(Typ)
Maximum Dark Current (nA)200
Maximum Light Current (uA)500
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)120
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor IR Chip Silicon 850nm 2-Pin PLCC T/R
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