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TEFT4300-CS12Z
TEFT4300-CS12Z
Phototransistors TEFT4300-CS12Z
Vishay
TEFT4300-CS12Z
--
Optoelectronics
Phototransistors
TEFT4300-CS12Z.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
Pin Count2
AutomotiveNo
PCB changed2
Part StatusActive
Package Width3.2
Cut-Off FilterVisible Cut-off
Package Height4.5
Package Length3.9
Lens Shape TypeDomed
Supplier PackageT-1
Viewing OrientationTop View
Peak Wavelength (nm)925
Phototransistor TypePhototransistor
Fabrication TechnologyNPN Transistor
Maximum Dark Current (nA)200
Maximum Light Current (uA)3200(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)60
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor IR Chip Silicon 925nm 2-Pin T-1
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