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QSE133
QSE133
Phototransistors QSE133
onsemi
QSE133
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Optoelectronics
Phototransistors
QSE133.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBag
Pin Count2
AutomotiveNo
Lens ColorBlack Transparent
PCB changed2
Part StatusActive
Package Width2.54
Cut-Off FilterVisible Cut-off
Package Height5.08
Package Length4.44
Lens Shape TypeDomed
Supplier PackageSide Looker
Viewing OrientationSide View
Peak Wavelength (nm)880
Phototransistor TypePhotodarlington
Standard Package NameSide Looker
Fabrication TechnologyNPN Darlington
Maximum Fall Time (ns)50000(Typ)
Maximum Rise Time (ns)20000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)9000(Min)
Number of Channels per Chip1
Maximum Collector Current (mA)150
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)25
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)1
Description
Photodarlington IR Chip Silicon 880nm 2-Pin Side Looker Bag
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