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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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TEMT1030
TEMT1030
Phototransistors TEMT1030
Vishay
TEMT1030
--
Optoelectronics
Phototransistors
TEMT1030.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingSurface Mount
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveNo
PCB changed2
Part StatusActive
Package Width2
Cut-Off FilterVisible Cut-off
Package Height2.7
Package Length2.5
Lens Shape TypeDomed
Supplier PackageSMD
Viewing OrientationTop View
Peak Wavelength (nm)950
Phototransistor TypePhototransistor
Standard Package NameSMD
Fabrication TechnologyNPN Transistor
Maximum Dark Current (nA)200
Maximum Light Current (uA)7000(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)30
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70(Min)
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor IR Chip Silicon 950nm 2-Pin SMD T/R
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