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QSB363GR
QSB363GR
Phototransistors QSB363GR
onsemi
QSB363GR
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Optoelectronics
Phototransistors
QSB363GR.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingSurface Mount
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveNo
Lens ColorBlack Transparent
PCB changed2
Part StatusActive
Package Width2.2(Max)
Cut-Off FilterVisible Cut-off
Package Height3(Max)
Package Length2.7(Max)
Lens Shape TypeDomed
Supplier PackageT-3/4
Viewing OrientationTop View
Peak Wavelength (nm)940
Phototransistor TypePhototransistor
Standard Package NameT-3/4
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)15000(Typ)
Maximum Rise Time (ns)15000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)1500(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)2
Maximum Power Dissipation (mW)75
Half Intensity Angle Degrees (°)24
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R
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