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2N3663
2N3663
RF BJT 2N3663
onsemi
2N3663
--
Diodes, Transistors and Thyristors
RF BJT
2N3663.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain20@8mA@10V
Typical Power Gain (dB)1.5(Min)
Maximum Noise Figure (dB)6.5
Number of Elements per Chip1
Operational Bias Conditions12V/6mA
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)350
Typical Output Capacitance (pF)1.7(Max)
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)2100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)500
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)500
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Junction Case Thermal Resistance125°C/W
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Junction Ambient Thermal Resistance357°C/W
Description
Trans RF BJT NPN 12V 0.05A 3-Pin TO-92 Bulk
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