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RF BJT 2SA1252-6-TB-E
onsemi
2SA1252-6-TB-E
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Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.75 |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 1.5 |
| Package Height | 1.1 |
| Package Length | 2.9 |
| Supplier Package | Case CP |
| Minimum DC Current Gain | 200@1mA@6V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | 200 to 300 |
| Maximum Power Dissipation (mW) | 200 |
| Typical Output Capacitance (pF) | 3.5 |
| Maximum DC Collector Current (A) | 0.15 |
| Maximum Emitter Base Voltage (V) | 15 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 100(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum DC Collector Current Range (A) | 0.12 to 0.5 |
| Maximum Collector-Emitter Voltage Range (V) | 50 to 60 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@5mA@50mA |
| Description |
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