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BFY193PZZZA1
BFY193PZZZA1
RF BJT BFY193PZZZA1
Infineon
BFY193PZZZA1
--
Diodes, Transistors and Thyristors
RF BJT
BFY193PZZZA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusUnconfirmed
ConfigurationSingle Dual Emitter
Package Width1.78
Package Height0.95
Package Length1.78
Supplier PackageMicro-X
Standard Package NameMicro-X
Minimum DC Current Gain50@30mA@8V
Typical Power Gain (dB)13.5
Maximum Noise Figure (dB)2.9
Number of Elements per Chip1
Operational Bias Conditions5V/40mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)580
Typical Input Capacitance (pF)1.9
Typical Output Capacitance (pF)0.56
Maximum DC Collector Current (A)0.08
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)25000
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)50
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.08A 580mW 4-Pin Micro-X
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