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2SC2314F
2SC2314F
RF BJT 2SC2314F
onsemi
2SC2314F
--
Diodes, Transistors and Thyristors
RF BJT
2SC2314F.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.7
Package Height11
Package Length8
Output Power (W)1.8(Typ)
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain160@500mA@5V
Number of Elements per Chip1
Minimum DC Current Gain Range120 to 200
Maximum Power Dissipation (mW)750
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)75
Maximum Transition Frequency (MHz)250(Typ)
Maximum Operating Temperature (°C)150
Maximum Collector-Emitter Voltage (V)75
Maximum DC Collector Current Range (A)0.5 to 2
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Voltage Range (V)70 to 100
Maximum Collector-Emitter Saturation Voltage (V)0.6@50mA@500mA
Description
Trans RF BJT NPN 75V 1A 750mW 3-Pin TO-126
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