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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2SC3143-4-TB-E
2SC3143-4-TB-E
RF BJT 2SC3143-4-TB-E
onsemi
2SC3143-4-TB-E
--
Diodes, Transistors and Thyristors
RF BJT
2SC3143-4-TB-E.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.5
Package Height1.1
Package Length2.9
Output Power (W)100
Supplier PackageCP
Maximum Turn-On Time (ns)180(Typ)
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Typical Output Capacitance (pF)2
Maximum DC Collector Current (A)0.08
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)180
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)160
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)100 to 200
Maximum Collector-Emitter Saturation Voltage (V)0.7@3mA@30mA
Description
Trans RF BJT NPN 160V 0.08A 200mW 3-Pin CP
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