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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2SC4400-3-TL-E
2SC4400-3-TL-E
RF BJT 2SC4400-3-TL-E
onsemi
2SC4400-3-TL-E
--
Diodes, Transistors and Thyristors
RF BJT
2SC4400-3-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.25
Package Height0.9
Package Length2
Supplier PackageCase MCP
Minimum DC Current Gain60@5mA@10V
Typical Power Gain (dB)28
Number of Elements per Chip1
Operational Bias Conditions10V/10mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)150
Typical Output Capacitance (pF)0.7
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)750(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)18
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA
Description
Trans RF BJT NPN 18V 0.05A 150mW 3-Pin Case MCP
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