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RF BJT BF799WH6327XTSA1
Infineon
BF799WH6327XTSA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 1.25 |
| Package Height | 0.9(Max) |
| Package Length | 2 |
| Supplier Package | SOT-323 |
| Standard Package Name | SOT-323 |
| Minimum DC Current Gain | 35@5mA@10V|40@20mA@10V |
| Maximum Noise Figure (dB) | 3(Typ) |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | 30 to 50 |
| Maximum Power Dissipation (mW) | 280 |
| Maximum DC Collector Current (A) | 0.035 |
| Maximum Emitter Base Voltage (V) | 3 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 1100(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum Base Emitter Saturation Voltage (V) | 0.95@2mA@20mA |
| Maximum Collector-Emitter Voltage Range (V) | 20 to 30 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@2mA@20mA |
| Description |
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