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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2SC4400-4-TL-E
2SC4400-4-TL-E
RF BJT 2SC4400-4-TL-E
onsemi
2SC4400-4-TL-E
--
Diodes, Transistors and Thyristors
RF BJT
2SC4400-4-TL-E.pdf
Specification
Product AttributeAttribute Value
TypeNPN
EU RoHSNot Compliant
ECCN (US)EAR99
Part StatusUnconfirmed
ConfigurationSingle
Minimum DC Current Gain90@5mA@10V
Typical Power Gain (dB)28
Number of Elements per Chip1
Operational Bias Conditions10V/10mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)150
Typical Output Capacitance (pF)0.7
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)750(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)18
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA
Description
Trans RF BJT NPN 18V 0.05A 3-Pin Case MCP
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