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RF BJT 2SC4406-4-TL-E
onsemi
2SC4406-4-TL-E
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.75 |
| Type | NPN |
| EU RoHS | Supplier Unconfirmed |
| Material | Si |
| ECCN (US) | EAR99 |
| Part Status | Unconfirmed |
| Configuration | Single |
| Minimum DC Current Gain | 100@5mA@10V |
| Typical Power Gain (dB) | 15 |
| Maximum Noise Figure (dB) | 2(Typ) |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 10V/10mA |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Power Dissipation (mW) | 150 |
| Maximum DC Collector Current (A) | 0.05 |
| Maximum Emitter Base Voltage (V) | 3 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 1200(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 1000 |
| Maximum Collector-Emitter Voltage (V) | 15 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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