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RF BJT 2SC5551AE-TD-E
onsemi
2SC5551AE-TD-E
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Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single Dual Collector |
| Package Width | 2.5 |
| Package Height | 1.5 |
| Package Length | 4.5 |
| Supplier Package | SOT-89 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 90@50mA@5V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Power Dissipation (mW) | 1300 |
| Typical Output Capacitance (pF) | 2.9 |
| Maximum DC Collector Current (A) | 0.3 |
| Maximum Emitter Base Voltage (V) | 2 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 3500(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 5000 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector Cut-Off Current (nA) | 1000 |
| Maximum DC Collector Current Range (A) | 0.12 to 0.5 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@5mA@50mA |
| Maximum Collector-Emitter Voltage Range (V) | 30 to 40 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@5mA@50mA |
| Description |
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