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BFU910FX
BFU910FX
RF BJT BFU910FX
NXP
BFU910FX
--
Diodes, Transistors and Thyristors
RF BJT
BFU910FX.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSiGe
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.35(Max)
Package Height0.75(Max)
Package Length2.2(Max)
Supplier PackageDFP
Standard Package NameDFP
Minimum DC Current Gain1200@1.5mA@1.5V
Typical Power Gain (dB)15.5(Max)
Maximum Noise Figure (dB)0.85(Min)
Number of Elements per Chip1
Operational Bias Conditions2V
Maximum Power Dissipation (mW)300
Typical Input Capacitance (pF)0.3
Typical Output Capacitance (pF)0.035
Maximum DC Collector Current (A)0.015
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)9.5
Maximum Transition Frequency (MHz)90000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)2(Typ)
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)9.5
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)12.5(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 9.5V 0.015A 300mW 4-Pin(3+Tab) DFP T/R
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