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BFR360L3E6327XT
BFR360L3E6327XT
RF BJT BFR360L3E6327XT
Infineon
BFR360L3E6327XT
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeNo Lead
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Width0.6
Package Height0.45(Max)
Package Length1
Supplier PackageTSLP
Standard Package NameTSLP
Minimum DC Current Gain90@15mA@3V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)210
Maximum DC Collector Current (A)0.035
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)14000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)6
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 6V 0.035A 210mW Automotive 3-Pin TSLP T/R
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