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BFG10,215
BFG10,215
RF BJT BFG10,215
NXP
BFG10,215
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Diodes, Transistors and Thyristors
RF BJT
BFG10,215.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Output Power (W)0.2
Supplier PackageSOT-143B
Minimum DC Current Gain25@50mA@5V
Typical Power Gain (dB)7
Number of Elements per Chip1
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)400
Maximum DC Collector Current (A)0.25
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)8
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Junction Ambient Thermal Resistance290 K/W
Description
Trans RF BJT NPN 8V 0.25A 4-Pin(3+Tab) SOT-143B T/R
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