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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MMBTH10-7-F
MMBTH10-7-F
RF BJT MMBTH10-7-F
Diodes Incorporated
MMBTH10-7-F
--
Diodes, Transistors and Thyristors
RF BJT
MMBTH10-7-F.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.98
Package Length2.9
Supplier PackageSOT-23
Standard Package NameSOT-23
Minimum DC Current Gain60@4mA@10V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)300
Typical Output Capacitance (pF)0.7
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)650(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Base Emitter Saturation Voltage (V)0.95(Typ)@4mA
Maximum Collector-Emitter Voltage Range (V)20 to 30
Maximum Junction Ambient Thermal Resistance417°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@400uA@4mA
Description
Trans RF BJT NPN 25V 0.05A 300mW 3-Pin SOT-23 T/R
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