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RF BJT BFG505W/X,115
NXP
BFG505W/X,115
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Supplier PackageSO
Standard Package NameSOP
Minimum DC Current Gain60@5mA@6V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.018
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)9000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 15V 0.018A 4-Pin(3+Tab) SO T/R
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