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BFY183PZZZA1
BFY183PZZZA1
RF BJT BFY183PZZZA1
Infineon
BFY183PZZZA1
--
Diodes, Transistors and Thyristors
RF BJT
BFY183PZZZA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingBox
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.88(Max)
Package Height1.1(Max)
Package Length1.88(Max)
Supplier PackageMicro-X
Minimum DC Current Gain55@5mA@6V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)450
Maximum DC Collector Current (A)0.065
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)12
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.065A 450mW 4-Pin Micro-X Box
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