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BFG67,215
BFG67,215
RF BJT BFG67,215
NXP
BFG67,215
--
Diodes, Transistors and Thyristors
RF BJT
BFG67,215.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageSOT-143B
Minimum DC Current Gain60@15mA@5V
Typical Power Gain (dB)17
Maximum Noise Figure (dB)3(Typ)
Number of Elements per Chip1
Operational Bias Conditions8V/15mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)380
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)10
Maximum Collector Cut-Off Current (nA)50
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 10V 0.05A 380mW 4-Pin(3+Tab) SOT-143B T/R
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