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BFP 840ESD H6327
BFP 840ESD H6327
RF BJT BFP 840ESD H6327
Infineon
BFP 840ESD H6327
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSiGe
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain150@10mA@1.8V
Typical Power Gain (dB)17
Maximum Noise Figure (dB)1.45(Typ)
Number of Elements per Chip1
Operational Bias Conditions1.8V/10mA
Minimum DC Current Gain Range120 to 200
Maximum Power Dissipation (mW)75
Typical Input Capacitance (pF)0.41
Typical Output Capacitance (pF)0.037
Maximum DC Collector Current (A)0.035
Maximum Collector Base Voltage (V)2.9
Maximum Transition Frequency (MHz)80000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)5(Typ)
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)10000
Maximum Collector-Emitter Voltage (V)2.25
Maximum Collector Cut-Off Current (nA)400
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)19.5(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 2.25V 0.035A 75mW Automotive 4-Pin(3+Tab) SOT-343 T/R
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