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BFR520T,115
BFR520T,115
RF BJT BFR520T,115
NXP
BFR520T,115
--
Diodes, Transistors and Thyristors
RF BJT
BFR520T,115.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width0.9(Max)
Package Height0.85(Max)
Package Length1.8(Max)
Supplier PackageSC-75
Standard Package NameSC
Minimum DC Current Gain60@20mA@6V
Typical Power Gain (dB)15
Maximum Noise Figure (dB)1.9(Typ)
Number of Elements per Chip1
Operational Bias Conditions6V/20mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)150
Maximum DC Collector Current (A)0.07
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)9000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)17(Typ)
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)50
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum 3rd Order Intercept Point (dBm)26(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 15V 0.07A 150mW 3-Pin SC-75 T/R
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