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RF BJT BFP196WN H6327
Infineon
BFP196WN H6327
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Configuration | Single Dual Emitter |
| Package Width | 1.25 |
| Package Height | 0.9(Max) |
| Package Length | 2 |
| Supplier Package | SOT-343 |
| Standard Package Name | SOT-343 |
| Minimum DC Current Gain | 70@50mA@8V |
| Typical Power Gain (dB) | 23.5(Max) |
| Maximum Noise Figure (dB) | 2.5(Min) |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 8V/50mA |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Power Dissipation (mW) | 700 |
| Typical Input Capacitance (pF) | 0.35 |
| Typical Output Capacitance (pF) | 0.9 |
| Maximum DC Collector Current (A) | 0.15 |
| Maximum Emitter Base Voltage (V) | 2 |
| Maximum Collector Base Voltage (V) | 20 |
| Maximum Transition Frequency (MHz) | 7500(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power 1dB Compression (dBm) | 19(Typ) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 1000 |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum DC Collector Current Range (A) | 0.12 to 0.5 |
| Maximum 3rd Order Intercept Point (dBm) | 32(Typ) |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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