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MMBTH10LT1
MMBTH10LT1
RF BJT MMBTH10LT1
onsemi
MMBTH10LT1
--
Diodes, Transistors and Thyristors
RF BJT
MMBTH10LT1.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain60@4mA@10V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)225
Typical Output Capacitance (pF)0.7(Max)
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)800(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage Range (V)30 to 40
Maximum Junction Ambient Thermal Resistance556°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.4mA@4mA
Description
Trans RF BJT NPN 25V 225mW 3-Pin SOT-23 T/R
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