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BFP620E7764XT
BFP620E7764XT
RF BJT BFP620E7764XT
Infineon
BFP620E7764XT
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSiGe
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain110@50mA@1.5V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)185
Maximum DC Collector Current (A)0.08
Maximum Emitter Base Voltage (V)1.2
Maximum Collector Base Voltage (V)7.5
Maximum Transition Frequency (MHz)65000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)2.3
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 2.3V 0.08A 185mW 4-Pin(3+Tab) SOT-343 T/R
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