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BFQ17,115
BFQ17,115
RF BJT BFQ17,115
NXP
BFQ17,115
--
Diodes, Transistors and Thyristors
RF BJT
BFQ17,115.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.6(Max)
Package Height1.6(Max)
Package Length4.6(Max)
Supplier PackageSOT-89
Standard Package NameSOT
Minimum DC Current Gain25@150mA@5V
Typical Power Gain (dB)16
Number of Elements per Chip1
Operational Bias Conditions15V/60mA
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)1000
Typical Output Capacitance (pF)4(Max)
Maximum DC Collector Current (A)0.15
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)1500(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)20
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum Collector-Emitter Voltage Range (V)20 to 30
Maximum Collector-Emitter Saturation Voltage (V)0.5@10mA@100mA
Description
Trans RF BJT NPN 25V 0.15A 1000mW 4-Pin(3+Tab) SOT-89 T/R
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