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RF BJT BFQ790H6327XTSA1
Infineon
BFQ790H6327XTSA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| Type | NPN |
| EU RoHS | Compliant |
| Material | SiGe |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Unknown |
| Lead Shape | Flat |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single Dual Emitter |
| Package Width | 2.5 |
| Package Height | 1.5 |
| Package Length | 4.5 |
| Supplier Package | SOT-89 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 60@250mA@5V |
| Typical Power Gain (dB) | 23 |
| Maximum Noise Figure (dB) | 3.4(Min) |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 5V/250mA |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Power Dissipation (mW) | 1500 |
| Typical Input Capacitance (pF) | 9.4 |
| Typical Output Capacitance (pF) | 1.1 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 2 |
| Maximum Collector Base Voltage (V) | 18 |
| Maximum Operating Temperature (°C) | 105 |
| Maximum Power 1dB Compression (dBm) | 27(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Emitter Cut-Off Current (nA) | 40000 |
| Maximum Collector-Emitter Voltage (V) | 6.1 |
| Maximum Collector Cut-Off Current (nA) | 40 |
| Maximum DC Collector Current Range (A) | 0.5 to 2 |
| Maximum 3rd Order Intercept Point (dBm) | 38.5(Typ) |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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