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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NSVF4017SG4T1G
NSVF4017SG4T1G
RF BJT NSVF4017SG4T1G
onsemi
NSVF4017SG4T1G
--
Diodes, Transistors and Thyristors
RF BJT
NSVF4017SG4T1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
PCB changed4
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.6
Package Height0.88(Max)
Package Length2
Supplier PackageMCPH
Minimum DC Current Gain60@50mA@5V
Maximum Noise Figure (dB)1.8
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions5V/30mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)450
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)10000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)1000
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.1A 450mW Automotive 4-Pin MCPH T/R
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