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BFR460L3E6327XTMA1
BFR460L3E6327XTMA1
RF BJT BFR460L3E6327XTMA1
Infineon
BFR460L3E6327XTMA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.6
Package Height0.45(Max)
Package Length1
Supplier PackageTSLP
Minimum DC Current Gain90@20mA@3V
Typical Power Gain (dB)16
Maximum Noise Figure (dB)1.35(Min)
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions3V/20mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)200
Typical Input Capacitance (pF)0.55
Typical Output Capacitance (pF)0.28
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)22000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)11.5(Typ)
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)4.5
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)27(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4.5V 0.05A 200mW Automotive 3-Pin TSLP T/R
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