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RF BJT BFR843EL3E6327XTSA1
Infineon
BFR843EL3E6327XTSA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| Type | NPN |
| EU RoHS | Compliant |
| Material | SiGe |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 1 |
| Package Height | 0.3(Max) |
| Package Length | 0.6 |
| Supplier Package | TSLP |
| Minimum DC Current Gain | 230@1mA@1.8V |
| Typical Power Gain (dB) | 25.5 |
| Maximum Noise Figure (dB) | 1.35(Min) |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 1.8V/15mA |
| Minimum DC Current Gain Range | 200 to 300 |
| Maximum Power Dissipation (mW) | 125 |
| Typical Input Capacitance (pF) | 0.66 |
| Typical Output Capacitance (pF) | 5.26 |
| Maximum DC Collector Current (A) | 0.055 |
| Maximum Collector Base Voltage (V) | 2.9 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power 1dB Compression (dBm) | 7.5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 10000 |
| Maximum Collector-Emitter Voltage (V) | 2.25 |
| Maximum Collector Cut-Off Current (nA) | 400 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum 3rd Order Intercept Point (dBm) | 23(Typ) |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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