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RF BJT BFS17SE6327XT
Infineon
BFS17SE6327XT
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Obsolete |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 0.9(Max) |
| Package Length | 2 |
| Supplier Package | SOT-363 |
| Standard Package Name | SOT-26 |
| Minimum DC Current Gain | 40@2mA@1V|20@25mA@1V |
| Typical Power Gain (dB) | 14 |
| Maximum Noise Figure (dB) | 5 |
| Number of Elements per Chip | 2 |
| Operational Bias Conditions | 5V/20mA |
| Minimum DC Current Gain Range | 2 to 30|30 to 50 |
| Maximum Power Dissipation (mW) | 280 |
| Typical Input Capacitance (pF) | 0.9 |
| Typical Output Capacitance (pF) | 0.55 |
| Maximum DC Collector Current (A) | 0.025 |
| Maximum Emitter Base Voltage (V) | 2.5 |
| Maximum Collector Base Voltage (V) | 25 |
| Maximum Transition Frequency (MHz) | 2500(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power 1dB Compression (dBm) | 11(Typ) |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Emitter Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Voltage (V) | 15 |
| Maximum Collector Cut-Off Current (nA) | 10000 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum 3rd Order Intercept Point (dBm) | 22.5(Typ) |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@1mA@10mA |
| Description |
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