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SD1274-01
SD1274-01
RF BJT SD1274-01
STMicroelectronics
SD1274-01
--
Diodes, Transistors and Thyristors
RF BJT
SD1274-01.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width6.48
Package Height7.11
Package Length24.89
Output Power (W)30(Min)
Supplier PackageCase M-113
Minimum DC Current Gain20@250mA@5V
Typical Power Gain (dB)10(Min)
Number of Elements per Chip1
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)70000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)36
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)16
Maximum DC Collector Current Range (A)8 to 100
Maximum Junction Case Thermal Resistance1.2°C/W
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 16V 8A 70000mW 4-Pin(4+Tab) Case M-113 Loose
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