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BFT92E6327
BFT92E6327
RF BJT BFT92E6327
Infineon
BFT92E6327
--
Diodes, Transistors and Thyristors
RF BJT
BFT92E6327.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height1(Max)
Package Length2.9
Supplier PackageSOT-23
Standard Package NameSOT-23
Minimum DC Current Gain20@15mA@8V
Typical Power Gain (dB)13.5
Maximum Noise Figure (dB)3(Typ)
Number of Elements per Chip1
Operational Bias Conditions8V/15mA
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)200
Typical Input Capacitance (pF)0.7
Typical Output Capacitance (pF)0.56
Maximum DC Collector Current (A)0.045
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)5000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT PNP 15V 0.045A 200mW 3-Pin SOT-23 T/R
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