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BFY182PZZZA1
BFY182PZZZA1
RF BJT BFY182PZZZA1
Infineon
BFY182PZZZA1
--
Diodes, Transistors and Thyristors
RF BJT
BFY182PZZZA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingBox
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.78
Package Height0.95
Package Length1.78
Supplier PackageMicro-X
Standard Package NameMicro-X
Minimum DC Current Gain55@5mA@6V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)250
Maximum DC Collector Current (A)0.035
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)12
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.035A 250mW 4-Pin Micro-X Box
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