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MMBTH10M3T5G
MMBTH10M3T5G
RF BJT MMBTH10M3T5G
onsemi
MMBTH10M3T5G
--
Diodes, Transistors and Thyristors
RF BJT
MMBTH10M3T5G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.8
Package Height0.5
Package Length1.2
Supplier PackageSOT-723
Standard Package NameSOT-723
Minimum DC Current Gain60@4mA@10V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)640
Typical Output Capacitance (pF)0.7(Max)
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)650(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage Range (V)20 to 30
Maximum Junction Ambient Thermal Resistance195°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.4mA@4mA
Description
Trans RF BJT NPN 25V 640mW 3-Pin SOT-723 T/R
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