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RF BJT BFY183ESZZZA1
Infineon
BFY183ESZZZA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Box |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Configuration | Single Dual Emitter |
| Package Width | 1.88(Max) |
| Package Height | 1.1(Max) |
| Package Length | 1.88(Max) |
| Supplier Package | Micro-X |
| Minimum DC Current Gain | 55@5mA@6V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Power Dissipation (mW) | 450 |
| Maximum DC Collector Current (A) | 0.065 |
| Maximum Emitter Base Voltage (V) | 2 |
| Maximum Collector Base Voltage (V) | 20 |
| Maximum Transition Frequency (MHz) | 8000(Typ) |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum DC Collector Current Range (A) | 0.06 to 0.12 |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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