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BFY450PZZZA1
BFY450PZZZA1
RF BJT BFY450PZZZA1
Infineon
BFY450PZZZA1
--
Diodes, Transistors and Thyristors
RF BJT
BFY450PZZZA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.88(Max)
Package Height1.1(Max)
Package Length1.88(Max)
Supplier PackageMicro-X
Minimum DC Current Gain50@20mA@1V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)450
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)22000(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)4.5
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4.5V 0.1A 450mW 4-Pin Micro-X
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