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RF BJT BFY450SZZZA1
Infineon
BFY450SZZZA1
--
Diodes, Transistors and Thyristors
RF BJT
BFY450SZZZA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MaterialSi
ECCN (US)EAR99
AutomotiveNo
ConfigurationSingle Dual Emitter
Minimum DC Current Gain50@20mA@1V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)450
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)22000(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)4.5
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4.5V 0.1A 450mW
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