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BLT80,115
BLT80,115
RF BJT BLT80,115
NXP
BLT80,115
--
Diodes, Transistors and Thyristors
RF BJT
BLT80,115.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width3.7(Max)
Package Height1.7(Max)
Package Length6.7(Max)
Output Power (W)0.8
Supplier PackageSC-73
Standard Package NameSC
Minimum DC Current Gain25@150mA@5V
Number of Elements per Chip1
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)0.25
Maximum Emitter Base Voltage (V)3
Typical Collector Efficiency (%)67
Maximum Collector Base Voltage (V)20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)10
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Junction Ambient Thermal Resistance85K/W
Description
Trans RF BJT NPN 10V 0.25A 2000mW 4-Pin(3+Tab) SC-73 T/R
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