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NSVF5501SKT3G
NSVF5501SKT3G
RF BJT NSVF5501SKT3G
onsemi
NSVF5501SKT3G
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.8
Package Height0.63(Max)
Package Length1.4
Supplier PackageSSFP
Minimum DC Current Gain100@10mA@5V
Typical Power Gain (dB)19
Maximum Noise Figure (dB)1.9(Typ)
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions5V/20mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)250
Typical Input Capacitance (pF)0.6
Typical Output Capacitance (pF)0.95
Maximum DC Collector Current (A)0.07
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)5500(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)10
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 10V 0.07A 250mW Automotive 3-Pin SSFP T/R
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