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S822TW-GS08
S822TW-GS08
RF BJT S822TW-GS08
Vishay
S822TW-GS08
--
Diodes, Transistors and Thyristors
RF BJT
S822TW-GS08.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.35(Max)
Package Height0.9(Max)
Package Length2.2(Max)
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain40@1mA@3V
Typical Power Gain (dB)14
Maximum Noise Figure (dB)2(Typ)
Number of Elements per Chip1
Minimum DC Current Gain Range30 to 50
Maximum Power Dissipation (mW)30
Maximum DC Collector Current (A)0.008
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)12
Maximum Transition Frequency (MHz)5200(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)6
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Collector-Emitter Saturation Voltage (V)0.4@0.5mA@5mA
Description
Trans RF BJT NPN 6V 0.008A 4-Pin(3+Tab) SOT-343 T/R
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