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2SC5277A-2-TL-E
2SC5277A-2-TL-E
RF BJT 2SC5277A-2-TL-E
onsemi
2SC5277A-2-TL-E
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width0.8
Package Height0.75
Package Length1.6
Supplier PackageSMCP
Minimum DC Current Gain90@10mA@5V
Maximum Noise Figure (dB)3
Number of Elements per Chip1
Operational Bias Conditions5V/10mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)100
Typical Output Capacitance (pF)0.45
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)10000
Maximum Collector-Emitter Voltage (V)10
Maximum Collector Cut-Off Current (nA)1000
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 10V 0.03A 100mW 3-Pin SMCP T/R
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