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SS9018GBU
SS9018GBU
RF BJT SS9018GBU
onsemi
SS9018GBU
--
Diodes, Transistors and Thyristors
RF BJT
SS9018GBU.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain72@1mA@5V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)400
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)1100(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)50
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Collector-Emitter Saturation Voltage (V)0.5@1mA@10mA
Description
Trans RF BJT NPN 15V 0.05A 400mW 3-Pin TO-92 Bag
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