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MMBTH10RG
MMBTH10RG
RF BJT MMBTH10RG
onsemi
MMBTH10RG
--
Diodes, Transistors and Thyristors
RF BJT
MMBTH10RG.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height0.93
Package Length2.92
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain50@1mA@6V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Typical Output Capacitance (pF)0.6(Max)
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)450(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)40 to 50
Maximum Junction Ambient Thermal Resistance556°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.2@5mA@10mA
Description
Trans RF BJT NPN 40V 0.05A 3-Pin SOT-23 T/R
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