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RF FETs 3SK263-5-TG-E
onsemi
3SK263-5-TG-E
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Obsolete |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single Dual Gate |
| Package Width | 1.5 |
| Package Height | 1.1 |
| Package Length | 2.9 |
| Supplier Package | CP |
| Typical Power Gain (dB) | 21 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Drain Source Voltage (V) | 15 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.03 |
| Typical Input Capacitance @ Vds (pF) | 2.7@6V |
| Maximum Gate Source Leakage Current (nA) | 50 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.015@6V |
| Description |
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