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MRF6V2300NBR5
MRF6V2300NBR5
RF FETs MRF6V2300NBR5
NXP
MRF6V2300NBR5
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle Dual Drain Dual Gate
Package Width9.07(Max)
Package Height2.64(Max)
Package Length23.67(Max)
Output Power (W)300(Typ)
Supplier PackageTO-272 W
Maximum IDSS (uA)2500
Mode of OperationCW
Process TechnologyLDMS
Standard Package NameTO-272 W
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)600
Minimum Frequency (MHz)10
Typical Power Gain (dB)25.5
Number of Elements per Chip1
Typical Drain Efficiency (%)61.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)110
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)268@50V
Typical Output Capacitance @ Vds (pF)120@50V
Maximum Gate Source Leakage Current (nA)10000
Typical Reverse Transfer Capacitance @ Vds (pF)2.88@50V
Description
Trans RF FET N-CH 110V 5-Pin TO-272 W T/R
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