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A2V07H400-04NR3
A2V07H400-04NR3
RF FETs A2V07H400-04NR3
NXP
A2V07H400-04NR3
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Part StatusActive
Channel TypeN
Maximum VSWR10
Output Power (W)107(Typ)
Maximum IDSS (uA)1
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)851
Minimum Frequency (MHz)595
Typical Power Gain (dB)19.9
Typical Drain Efficiency (%)59.4
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)105
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF FET N-CH 105V 4-Pin T/R
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