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RF FETs AFT20P140-4WGNR3
NXP
AFT20P140-4WGNR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
Package Width10.01(Max)
Package Height3.86(Max)
Package Length20.62(Max)
Output Power (W)24(Typ)
Supplier PackageOM-780G EP
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2025
Minimum Frequency (MHz)1880
Typical Power Gain (dB)17.8
Typical Drain Efficiency (%)41.4
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF FET N-CH 65V 5-Pin OM-780G EP T/R
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